INVESTIGADORES
ZALAZAR Martin
artículos
Título:
Integration of piezoelectric aluminum nitride and ultrananocrystalline diamond films for implantable biomedical microelectromechanical devices
Autor/es:
M. ZALAZAR; P. GURMAN; J. PARK; D. KIM; S. HONG; L. STAN; R. DIVAN; D. CZAPLEWSKI; O. AUCIELLO
Revista:
APPLIED PHYSICS LETTERS
Editorial:
AMER INST PHYSICS
Referencias:
Lugar: New York; Año: 2013 p. 1041011 - 1041014
ISSN:
0003-6951
Resumen:
The physics for integration of piezoelectric aluminum nitride (AlN) films with underlying insulating ultrananocrystalline diamond (UNCD), and electrically conductive grain boundary nitrogen-incorporated UNCD (N-UNCD) and boron-doped UNCD (B-UNCD) layers, as membranes for microelectromechanical system implantable drug delivery devices, has been investigated. AlN films deposited on platinum layers on as grown UNCD or N-UNCD layer (5?10 nm rms roughness) required thickness of 400 nm to induce (002) AlN orientation with piezoelectric d33 coefficient 1.91 pm/V at 10 V. Chemical mechanical polished B-UNCD films (0.2 nm rms roughness) substrates enabled (002) AlN film 200 nm thick, yielding d33=5.3 pm/V.
