INVESTIGADORES
MASSA Nestor Emilio
artículos
Título:
The raman spectrum of K2SeO4. effects of temperature, substitutional cations, and stress
Autor/es:
N. E. MASSA,; F. G. ULLMAN; J. R. HARDY
Revista:
FERROELECTRICS
Editorial:
TAYLOR & FRANCIS LTD
Referencias:
Lugar: Londres; Año: 1980 vol. 25 p. 601 - 604
ISSN:
0015-0193
Resumen:
A fine structure of unknown origin, well resolved at low temperature, has been observed on the low frequency side of the strongest internal mode, at 842 cm1, in the Raman spectrum of K2SeO4. It consists of three sidebands, monotonically decreasing in intensity, at about 10 cm1 intervals. The behavior of this fine structure with varying temperature in pure and doped crystals was found to be essentially the same. This suggests that the defectinduced scattering (reported previously) arises from intrinsic defects. Uniaxial stress produces marked softening of the external modes.
