INVITED: Plastic Activity Due to Deformation of Nanovoids

E. M. BRINGA

San Diego

Congreso; TMS 2014; 2014

TMS

http://www.programmaster.org/PM/PM.nsf/ViewSessionSheets?OpenAgent&ParentUNID=9CF86D8808B2A64785257BD1007CA760The work by Lubarda et al. [Acta Mat. 52 (2004) 1397] on dislocation-based plasticity from a void led to a series of simulation studies on nanovoids under stress, for fcc [Davila et al., Appl. Phys. Lett. 86 (2005) 161902] and bcc materials [Tang et al., Acta Mat. 60 (2012) 4856], showing good agreement with their analytical model. Detailed description of dislocations emitted from voids for different loading directions have been carried out for fcc [Traiviratana et al., Acta Mat. 56 (2008) 3874] and bcc metals [Tramontina et al., submitted]. Recently, studied the behavior of multiple voids and porosities below 5%, where void-void interaction plays an important role in the plastic threshold [Ruestes et al., Scripta Mat. 68 (2013) 818, and J. Rodriguez-Nieva et al., submitted]. Dislocation density and twin volume fractions resulting from loading, void-size effects and strain-rate effects will be discussed, together with comparison to constitutive models.