INVESTIGADORES
TROVIANO Mauricio Eduardo
artículos
Título:
ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods
Autor/es:
M. BERRUET; Y. DI IORIO; M. TROVIANO; M. VÁZQUEZ
Revista:
MATERIALS CHEMISTRY AND PHYSICS
Editorial:
ELSEVIER SCIENCE SA
Referencias:
Lugar: Amsterdam; Año: 2014 vol. 148 p. 1071 - 1077
ISSN:
0254-0584
Resumen:
Solution-based techniques were used to prepare ZnO/CuIn(Se, S)2
heterojunctions that serve as solar cell prototypes. A duplex layer of
ZnO (compact + porous) was electrodeposited. Chalcogenide thin films
were deposited using successive ionic layer adsorption and reaction
method (SILAR). By subsequent thermal treatments in two different
atmospheres, CuInSe2 (CISe) and CuInSe2−xSx
(CISeS) were obtained. The composition and morphology of the annealed
films were characterized by GXRD, micro-Raman spectroscopy and SEM.
Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO2
into the ZnO/chalcogenide interface was necessary to detect
photocurrent. The presence of CISeS improves the response of the cell,
with higher values of short circuit current density, open circuit
potential and fill factor. These promising results show that it is
possible to prepare photovoltaic heterojunctions by depositing
chalcogenides onto porous ZnO substrates using low-cost solution-based
techniques.