Graphene field effect transistors using TiO2 as the dielectric layer

LAURA N. SERKOVIC LOLI

Congreso; Graphene and 2D Materials Online Conference (GO2020); 2020

It is very important to find a suitable substrate forgraphene electronic devices. In this work, we report the electron mobility andelectron density of three graphene field effect transistors using a 280 nm titaniumdioxide dielectric layer and a graphene channel of area 300 × 300 μm2.We achieve electron mobilities up to 1877 cm2/V and the Dirac pointappears in small gate voltages, as compared to similar SiO2 transistors.Also, we obtain the TiO2 surface roughness through profilometry andconfirm that electron mobility is inversely proportional to the channel?ssurface roughness.