Conducting domain wall networks in TbMnO3

R. HAMMING-GREEN; ACEVEDO, W ROMÁN; D RUBI; C. P. QUINTEROS; D. RUBI; SALVERDA, MART; P. NUKALA; S. FAROKHIPOOR

Dresde

Congreso; MEMRISYS 2019; 2019

We report on the out of plane electrical properties of metal/TbMnO 3 /Nb:SrTiO 3structures. The TbMnO 3 films present a pattern of as-grown crystallographic domain walls with different chemistry and physical properties with respect to the bulk compound. We model the experimental electrical behavior by an equivalent circuit that assumes electric transport through the domain walls. The observed scaling with the film thickness and device area supports this scenario. Additionally, we show our devices to present memristive behavior. Our work paves the way to the investigation of the ?electrical plasticity? and connectivity of domain wall networks in order to explore their application in neuromorphic computing.