Josephson coupling in high-Tc superconducting junctions using ultra-thin BaTiO3 barriers

H. NAVARRO; N. HABERKORN; M. SIRENA,; JEEHOON KIM

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

ELSEVIER SCIENCE BV

Lugar: Amsterdam; Año: 2020 vol. 262

0921-5107

We study the electrical transport of vertically-stacked Josephson tunnel junctions using GdBa2Cu3O7−δelectrodes and a BaTiO3 barrier with thicknesses between 1 nm and 3 nm. Current-voltage measurements at low temperatures show a Josephson coupling for junctions with BaTiO3 barriers of 1 nm and 2 nm. Reducing the barrier thickness bellow a critical thickness seems to suppress the ferroelectric nature of the BaTiO3. The Josephson coupling temperature reduces as the barrier thicknesses increases. The Josephson energies at 12 K are of ≈ 1.5 mV and ≈ 7.5 mV for BaTiO3 barriers of 1 nm and 2 nm, respectively. Fraunhofer patterns are consistent with fluctuations in the critical current due to structural inhomogeneities in the barriers. Our results are promising for the development of Josephson junctions using high-Tc electrodes with energy gaps much higher than those usually present in conventional low-temperature superconductors.