Three-dimensional trapping of light with light in semiconductor planar microcavities

ANGUIANO, S.; LEMAÎTRE, A.; ANGUIANO, S.; LEMAÎTRE, A.; BRUCHHAUSEN, A. E.; FAINSTEIN, A.; BRUCHHAUSEN, A. E.; FAINSTEIN, A.; REYNOSO, A. A.; BLOCH, J.; REYNOSO, A. A.; BLOCH, J.

PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS

American Physical Society

Año: 2019 vol. 99 p. 195308 - 195316

2469-9950

When light is confined in all three directions and in dimensions of the order of the light wavelength,discretization of the photon spectra and distinctive phenomena occur, the Purcell effect and the inhibition ofemission of atoms being two paradigmatic examples. Diverse solid-state devices that confine light in all threedimensions have been developed and applied. Typically the confinement volume, operating wavelength, andquality factor of these resonators are set by construction, and small variations of these characteristics withexternal perturbations are targeted for applications including light modulation and control. Here we describe fullthree-dimensional light trapping, that is set and tuned by laser excitation in an all-optical scheme. The proposeddevice is based on a planar distributed Bragg reflector GaAs semiconductor microcavity operated at roomtemperature. Lateral confinement is generated by an in-plane gradient in the refractive index of the structure?smaterials due to localized heating, which is in turn induced by carriers photoexcited by a focused laser. Strongthree-dimensional trapping of light is evidenced by the laser-induced changes on the spectral, spatial, andk-spacedistribution of the emission. The dynamics of the laser-induced photonic potential is studied using modulatedoptical excitation, highlighting the central role of thermal effects at the origin of the observed phenomena