UE-INN   27105
UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA
Unidad Ejecutora - UE
artículos
Título:
Characterization of a low-power CMOS operational amplifier from 12.5K to 273K for low temperature experiments
Autor/es:
LIPOVETZKY, JOSE; PEREZ, MARTIN; BESSIA, FABRICIO ALCALDE; BERISSO, MARIANO GOMEZ; GUIMPEL, JULIO
Revista:
2020 Argentine Conference on Electronics, CAE 2020
Editorial:
Institute of Electrical and Electronics Engineers Inc.
Referencias:
Lugar: Nueva York; Año: 2020 p. 73 - 76
Resumen:
In this work, we present the design and first characterization of an operational amplifier for use at cryogenic temperatures. We show the functionality of the amplifier in a range of temperatures from 12.5K to 273K. Drain current to gate voltage curves of n-channel and p-channel MOS transistors, resistors and the amplifier response were measured. The circuit allows the amplification of signals up to 100kHz with a power consumption of 48mumathrm{W}.