Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application

FLANDRE, DENIS; PEREZ, MARTIN; ANDRE, NICOLAS; BERISSO, MARIANO GOMEZ; BESSIA, FABRICIO ALCALDE; IRAZOQUI, JULIETA; LIPOVETZKY, JOSE

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Lugar: New York; Año: 2019 p. 1 - 1

0018-9499

We evaluate the use of the thick buried oxide (BOX) of Fully Depleted Silicon-on-Insulator (FD-SOI) transistors for Total Ionizing Dose (TID) measurements in a radiotherapy application. The devices were fabricated with a custom process in Université Catholique de Louvain (UCL) which allows to make accumulation mode PMOS transistors and inversion mode NMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray radiation produced by an Elekta radiotherapy linear accelerator, and compared the obtained dose sensitivity to other published works. Taking advantage of these devices, an ultra low power MOS ionizing dose sensor, or MOS dosimeter, with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA.