Effects of induced strain on the Raman spectra of AlxGa1−xAs compounds

TOSI, L.; ROZAS, G.; PASTORIZA, H.; PRADO, A.; SALAZAR ALARCON, L.; PEREZ-MORELO, D.J.; GONZALEZ, M.; ANGUIANO, S.

PHYSICA B - CONDENSED MATTER

ELSEVIER SCIENCE BV

Año: 2022 vol. 643 p. 414145 - 414145

0921-4526

In this work we study the nuances of composition determination of AlxGa1−xAs alloys by Raman spectroscopy. We mainly focus on understanding the effect of induced strain on the frequency of the optical phonons, a possible source of the dispersion in the calibration curves found in the literature. We conclude that while GaAs-like and AlAs-like Raman peaks may show a wide dispersion across samples of the same composition, aluminum concentration can still be accurately determined via Raman spectroscopy, provided that the difference between the GaAs-like and AlAs-like longitudinal optical modes is used, regardless of residual strain present.