UE-INN 27105
UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA
Unidad Ejecutora - UE
artículos
Título:
Could Silicon Solar Sensors Survive a Carrington Type Event?
Autor/es:
M. DIAZ SALAZAR; M. J. L. TAMASI; A. MORENO; M.L. IBARRA; M. G. MARTÍNEZ BOGADO; N. KONDRATIUK; M. A. ALURRALDE
Revista:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Editorial:
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Referencias:
Lugar: New York; Año: 2022 vol. 69 p. 1236 - 1241
ISSN:
0018-9499
Resumen:
The objective of the present work is to study the effects of the damage produced by a Carrington-type event on silicon devices. Solar sensors were selected as an example for their simplicity. The CAC -Centro Atómico Constituyentes- method was applied to define the irradiation conditions. The results showed the extension of effects for this type of events on displacement sensitive devices and will allow future satellite missions to design strategies to minimize radiation damage for this type of devices in future satellite missions.
