Electrical Transport Properties and Raman spectroscopy in FeSe single crystals

M. V. ALE CRIVILLERO; G. NIEVA; G. ROZAS; A. BRUCHHAUSEN; M. VILLAFUERTE; L. LANOEL; L. AMIGO; G. BRIDOUX

Bariloche

Simposio; XXIII Latin American Symposium on Solid State Physics; 2018

In this work, we present a preliminar Ramanspectroscopy study of β-Fe Se and doped FeSe Te , FeSE single crystals at different temperatures. The results reveal astrong temperature dependence of the Raman spectra on FeSe(FeSe 1:1) as it was previously reported with an anomalousbehavior above the structural transition temperature. In FeSe(LA03) the Raman spectra characteristic peaks are observed at236.3 cm-1 and 255,1cm-1 while in FeSe (LL01) these peaks arenot present, instead two sharp peaks appear at 183.4cm-1 and207.1cm-1. Both sets of peaks present different behavior (inrelative intensity and energy position) when the temperature ischanged. Electrical transport measurements show the typicaltemperature dependence of resistivity for this material, with aclear kink at the structural transition temperature (~90K).Magnetization measurements reveals a critical temperature of:T =8K for both sets of samples. Also X-Ray diffractometry Cpatterns are the same in both cases LA03 and LL01