Franz-Keldysh effect in epitaxial ZnO thin films

FERREYRA, J.M.; FIGUEROA, C.A.; BRIDOUX, G.; GUIMPEL, J.; STRAUBE, B.; BRIDOUX, G.; GUIMPEL, J.; VILLAFUERTE, M.; STRAUBE, B.; NIEVA, G.; VILLAFUERTE, M.; HELUANI, S.P.; NIEVA, G.; FERREYRA, J.M.; HELUANI, S.P.; FIGUEROA, C.A.

APPLIED PHYSICS LETTERS

AMER INST PHYSICS

Año: 2018 vol. 112

0003-6951

Photoconductance spectroscopy has been studied in epitaxial ZnO thin films with different thicknesses that range between 136 and 21 nm. We report a systematic decrease in photoconductivity and a red shift in band edge photoconductance spectra when the thickness is reduced. For thinner films, it is found that the effective energy gap value diminishes. By time dependent photoconductivity measurements, we found an enhanced contribution of the slow relaxation times for thicker films. These effects are interpreted in terms of a band-bending contribution where the Franz-Keldysh effect and the polarization of ZnO play a major role in thinner films.