PAC and PALS study of the Si-HfO2 system subjected to high energy ball milling

C. Y. CHAIN; LAURA CRISTINA DAMONTE; SERGIO FERRARI; E. MUÑOZ; A. F. PASQUEVICH; C. E. RODRÍGUEZ TORRES

Ginebra

Conferencia; 3rd Joint International Conference on Hyperfine Interactions and International Symposium on Nuclear Quadrupole Interactions; 2010

A high-k HfO2/SiO2 gate stack is taking the place of SiO2 as a gate dielectric in field effect transistors.This make very important the study of the solid state chemical interaction between both oxides. Before beginning with a study of the reactions between both oxides at the interface of thin films, we initiated Perturbed Angular Correlations (PAC) and Positron Lifetime studies (PALS) of the solid state reactions using samples prepared mixing the oxides by ball milling. Room temperature PAC and PALS measurements were done after annealing under air at several temperatures. The results are compared with microstructure data existent in the literature of nanocrystalline ZrSiO4 synthesized by ball-milling and high-temperature annealing.