Characterization of sputtered W–Si–N thin films by a monoenergetic positron beam

S. MARIAZZI; C. MACCHI; E. BOSCOLO MARCHI; G.P. KARWASZ; R.S. BRUSA

RADIATION PHYSICS AND CHEMESTRY

Elsevier

Año: 2007 p. 209 - 212

0146-5724

A monoenergetic positron beam was employed to characterize the uniformity and the microstructural variation ofthermally treated W–Si–N thin film. As the annealing temperature is increased, positrons are found to be progressivelytrapped in sites rich in silicon. This behavior is explained by the formation of W clusters from which positrons arefavorably trapped into the Si–N amorphous matrix. Positron results are discussed together with information obtainedon similar samples by Rutheford backscattering, infrared spectroscopy and transmission electron microscopymeasurements.