High resistivity in n-type InP and InGaAsP by He+ ion induced amorphization

V. SARGUNAS; D. COMEDI; J. ZHAO; K. JANKOWSKA; D. A. THOMPSON; J. G. SIMMONS

Boston MA

Congreso; Materials Research Society Meeting; 1993

MRS Society

The formation of high-resistivity regions in Si-doped (n = 1 x 10(18) cm-3) InP and lattice-matched In0.75Ga0.25As0.54P0.46 on InP by helium ion bombardment is reported. Samples were implanted within the 1 x 1012 - 1 x 1016 cm-2 He+ dose range and subsequently annealed in the 70-650oC temperature range. The sheet resistance and Hall parameters  were measured as a function of the sample temperature. Irradiations at 300 K are found to induce an increase in the resistivity by a factor of up to 3 x 105 for InGaAsP and 1x104 for InP relative to the values in the unimplanted materials. Materials bombarded at 80 K with doses higher than 7 x 10(14) cm-2 exhibit a further increase in the sheet resistance and higher stability upon subsequent annealing. Rutherford backscattering channeling results suggest that this behavior is related to the creation of amorphous regions.