Miniband Effects in short-period InGaAs/InP superlattices

YU. A. PUSEP; A. DE GIOVANNI RODRIGUEZ; J. C. GALZERANI; D. COMEDI; R. R. LAPIERRE

Viena

Conferencia; 28th International Conference on the Physics of Semiconductors - ICPS 2006.; 2006

The formation of the miniband electron energy structure and its effects on optical vibrational modes were explored in doped InGaAs/InP superlattices with different periods. The analysis of the high resolution X-ray diffraction and Raman data allowed us to conclude that in spite of the defect structure of the layers constituting the superlattices, their super-periodicity is well defined. The quantitative proof of the conditions for break-down of the Raman selection rules is presented. No Raman selection rules were observed for the longitudinal optical phonons in long period superlattices. In short-period superlattices the emergence of the selection rules of the couples plasmons-LO phonon vibrations was demonstrated to occur due to the increase of their correlation lengths.