Study of the Effect of Metal/Semiconductor Interface Properties on a Resistance Switching Device

M. VILLAFUERTE; S. P. HELUANI; G. JUÁREZ; D. COMEDI; G. BRAUNSTEIN; F. GOLMAR

San Francisco CA, EEUU

Congreso; Materials Research Society Meeting; 2007

MRS

N-doped ZnO thin films were deposited by pulsed laser deposition on SiO2/Si substrates. X-ray diffraction analysis revealed that the films have the wurtzite structure and are highly oriented along the c-axis direction. Two Au and two Al electrical contacts were deposited by sputtering on the top surface of the samples, forming a symmetric two-terminal structure in each case. The current-voltage characteristics of the two-terminal structures, and the temperature dependence of the resistance switching effect, were studied in the 125-300 K temperature range. The results of these measurements are presented and discussed in terms of the different Schottky barrier heights, as well as in terms of interfacial defect-induced gap states.