INVESTIGADORES
COMEDI David Mario
artículos
Título:
Fano resonance in heavily doped porous silicon
Autor/es:
YU. A. PUSEP; A. D. RODRIGUES; L. J. BORRERO-GONZÁLEZ; L. N. ACQUAROLI; R. URTEAGA; R. D. ARCE; R. R. KOROPECKI; M. TIRADO; D. COMEDI
Revista:
JOURNAL OF RAMAN SPECTROSCOPY
Editorial:
JOHN WILEY & SONS LTD
Referencias:
Año: 2011
ISSN:
0377-0486
Resumen:
Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO₂interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined. DOI: 10.1002/jrs.2870
