INVESTIGADORES
COMEDI David Mario
artículos
Título:
Negative differential resistance in porous silicon devices at room temperature
Autor/es:
O. MARÍN; V. TORANZOS; R. URTEAGA; D. COMEDI; R. R. KOROPECKI
Revista:
SUPERLATTICES AND MICROSTRUCTURES
Editorial:
ACADEMIC PRESS LTD-ELSEVIER SCIENCE LTD
Referencias:
Lugar: Amsterdam; Año: 2015 vol. 79 p. 45 - 53
ISSN:
0749-6036
Resumen:
We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current?voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices.
