High-resistivity regions in n-type InGaAsP produced by 4He+ ion bombardment at 80 and 300K

D. COMEDI; J. ZHAO; K. JANKOWSKA; D. A. THOMPSON; J. SIMMONS

APPLIED PHYSICS LETTERS

Año: 1993 vol. 63 p. 2126 - 2128

0003-6951

The formation of high-resistivity regions in Si-doped (n = 1 x 10(18) cm-3) lattice-matched In0.75Ga0.25As0.54P0.46 on InP by helium ion bombardment at 300 and 80 K has been investigated as a function of ion dose (1 x 10(12)-1 x 10(16) cm-2) and subsequent annealing temperature (70-650-degrees-C) by sheet resistance and Hall effect measurements as a function of temperature. Irradiations at 300 K are found to induce an increase in the resistivity by a factor of up to 3 x 10(5) relative to that of the unimplanted material. Materials bombarded at 80 K with doses higher than 7 x 10(14) cm-2 exhibit a further increase in the sheet resistance and higher stability upon subsequent annealing. Rutherford backscattering channeling results suggest that this behavior is related to the creation of a highly polycrystalline or amorphous region in the InGaAsP layer which occurs for irradiations performed at 80 K, but not at 300 K.