Ga Doped ZnO Nanowires Growth on ZnO Thin Films Prepared by the Two Stages Hydrothermal Method

C. BOJORGE; H. CÁNEPA; E. HEREDIA; N.E. WALSOE DE RECA

Campinas

Congreso; 26th RAU Annual Users Meeting LNLS/CNPEM; 2016

LNLS

Ga:ZnO based films have been actively studied because of their applications as solar cells, gas sensors, piezoelectric transducers, ultrasonic oscillators and for different optoelectronic applications. Besides their interesting optical, electrical and piezoelectrical properties, this material exhibits a high chemical and mechanical stability. Ga:ZnO presents novel properties and potential applications in optoelectronic fields because its non linear optical properties, excitonic emission at room temperature and quantum size effect.In the present work we studied Ga-doped ZnO nanowires growth on Ga:ZnO thin films obtained by the two stages hydrothermal method. Samples with different number of layers and different percentage of dopant were characterized by grazing incidence small-angle X-ray scattering (GISAXS) and X-ray reflectivity (XR). These experiments were performed at Laboratório Nacional de Luz Síncrotron (LNLS). Structural characterization by Field Emission Scanning Electron Microscopy (FESEM) was carried out at Centro de Microscopias Avanzadas (CEA) of UBA (Buenos Aires-Argentina). Present results were also compared to those obtained for Ga:ZnO films.