UNIDEF 23986
UNIDAD DE INVESTIGACION Y DESARROLLO ESTRATEGICO PARA LA DEFENSA
Unidad Ejecutora - UE
artículos
Título:
Structural quality in single crystalline CdSe ingots grown by PVT
Autor/es:
R. D'ELÍA; E. HEREDIA; J.L.M. NUÑEZ GARCÍA; M.H. AGUIRRE; A.M. MARTÍNEZ; A.B. TRIGUBÓ; M.C. DI STEFANO; H.R. CÁNEPA
Revista:
REVISTA MATéRIA
Editorial:
UNIV FED RIO DE JANEIRO
Referencias:
Lugar: Rio de Janeiro; Año: 2020
ISSN:
1517-7076
Resumen:
CdSe is II-VI semiconductor with compact hexagonal structure. It has a band gap of 1.82 eV and a highstopping power for nuclear radiation. Single crystalline CdSe ingots were grown by Physical Vapor Transport (PVT) employing a horizontal reactor. As devices critically depend on material properties its single crystalline quality was determined by chemical etching and transmission electron microscopy. Results were compared to those corresponding to Bridgman High Pressure (HPB) grown material and also to PVT material grown in a vertical reactor.
