Structural characterization of supported nanocrystalline ZnO thin films prepared by dip-coating

J. R. CASANOVA; E. A. HEREDIA; C. D. BOJORGE; H. R. CÁNEPA; G. KELLERMANN; A. F. CRAIEVICH

APPLIED SURFACE SCIENCE

ELSEVIER SCIENCE BV

Año: 2011 vol. 257 p. 10045 - 10051

0169-4332

Abstract Nanocrystalline ZnO thin films prepared by the sol–gel dip-coating technique were characterized by grazing incidence X-ray diffraction (GIXD), atomic force microscopy (AFM), X-ray reflectivity (XR) and grazing incidence small-angle X-ray scattering (GISAXS). The structures of several thin films subjected to (i) isochronous annealing at 350, 450 and 550 °C, and (ii) isothermal annealing at 450 °C during different time periods, were characterized. The studied thin films are composed of ZnO nanocrystals as revealed by analysing several GIXD patterns, from which their average sizes were determined. Thin film thickness and roughness were determined from quantitative analyses of AFM images and XR patterns. The analysis of XR patterns also yielded the average density of the studied films. Our GISAXS study indicates that the studied ZnO thin films contain nanopores with an ellipsoidal shape, and flattened along the direction normal to the substrate surface. The thin film annealed at the highest temperature, T = 550 °C, exhibits higher density and lower thickness and nanoporosity volume fraction, than those annealed at 350 and 450 °C. These results indicate that thermal annealing at the highest temperature (550 °C) induces a noticeable compaction effect on the structure of the studied thin films.