Characteristic Parameters of Simulated PIN Photodiodes under Proton Radiation

MARCELO ANGEL CAPPELLETTI; EITEL LEOPOLDO PELTZER Y BLANCÁ

Buenos Aires

Workshop; 7th IEEE Latin American Test Workshop (LATW´06); 2006

Pontifícia Universidade do Rio Grande do Sul (PUCRS), Brasil y Instituto Nacional de Tecnología Industrial (INTI), Argentina

The present paper aims at the study of characteristic parameters of different simulated PIN photodiodes exposed to spatial radiation. Numerical simulations were used in this work. The modelling and simulation of the PIN photodiodes were done solving the Poisson and continuity equations self consistently to obtain the behaviour of electronic devices. The effects of the radiation studied were the atomic displacement damages. Characteristic parameters of PIN photodiodes, such as the reverse saturation current, the ideality factor, the serial resistance and the shunt resistance, under forward bias conditions, were determined at 300 K.