INVESTIGADORES
CAPPELLETTI Marcelo Angel
congresos y reuniones científicas
Título:
Enhanced radiation tolerance of Si detectors by addition of gold impurities: A simulation study
Autor/es:
ARIEL PABLO CÉDOLA; MARCELO ANGEL CAPPELLETTI; EITEL LEOPOLDO PELTZER Y BLANCÁ
Lugar:
Wildbad Kreuth
Reunión:
Simposio; 11th European Symposium on Semiconductor Detectors (SDS 09); 2009
Institución organizadora:
Max-Planck-Institut (MPI)
Resumen:
High energy particle irradiation generates transient and permanent damages in semiconductors, making them able to be applied as radiation detectors. However, permanent damages cause the lifetime of detectors be limited and hence their applications be restricted. In this work, theoretical results about the enhancement of detectors tolerance to neutron radiation, obtained by doping silicon with gold atoms, are presented and discussed.