Investigation of Deep-Level Effects on Dark Current of Proton Irradiated Silicon PIN Photodiodes

ARIEL PABLO CÉDOLA; MARCELO ANGEL CAPPELLETTI; EITEL LEOPOLDO PELTZER Y BLANCÁ

Smolenice

Conferencia; 7th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM´08); 2008

Institute of Electrical Engineering, Academia de Ciencias, Eslovaquia

Damage induced by proton irradiation on silicon PIN photodiodes produces a linear increment of dark current with particle fluence. This effect results of great utility when devices are used as radiation detectors. However, it represents an undesirable effect in optoelectronic space systems. In previous work, authors have studied this dependence of dark current with radiation through numerical simulations. A simple linear analytical model has been proposed for dark current based on obtained results and an iterative method has been established for determination of the optimum intrinsic Si layer length that minimize radiation effects on PIN photodiodes for space applications. In the present work, and following with this field of research, the theoretical study of irradiated PIN photodiodes is enhanced by including different kinds of deep-traps in the computer simulation routines.