Simulation of PIN Photodiodes Exposed to Spatial Radiation

GUSTAVO DOMINGO YAGÜEZ; DIEGO VILLARRAZA; MARCELO ANGEL CAPPELLETTI; EITEL LEOPOLDO PELTZER Y BLANCÁ

Miami

Conferencia; WSEAS Conferences; 2004

World Scientific and Engineering Academy and Society (WSEAS)

The present work aims at the study of physical processes that take place in PIN photodiodes exposed to spatial radiation. The modelling and simulation of electronic devices is done by means of numerical algorithms.  By using the coupled Poisson and Continuity equation we have obtained the description of  the behavior of electronic devices numerically. The effects of the radiation studied in the present work is the atomic displacement damages.