INVESTIGADORES
CAPPELLETTI Marcelo Angel
congresos y reuniones científicas
Título:
Study of Radiation Effects on PIN Photodiodes with Deep-Trap Levels using Computer Modeling
Autor/es:
MARCELO ANGEL CAPPELLETTI; ARIEL PABLO CÉDOLA; SERGIO BARÓN; GUILLERMO CASAS; EITEL LEOPOLDO PELTZER Y BLANCÁ
Lugar:
Río de Janeiro
Reunión:
Workshop; 10th IEEE Latin American Test Workshop (LATW09); 2009
Institución organizadora:
IEEE - Universidade Federal do Rio Grande do Sul (UFRGS), Brasil
Resumen:
In the present work, a complete numerical analysis of the influence of deep-trap levels on the dark current of silicon PIN photodiodes under 1 MeV neutron radiation was done. Results corroborate that energy levels near the mid-gap affect to a great extent the dark current. Radiation tolerances of undoped and gold-doped devices were compared through simulations. It has been concluded that gold in silicon reduces the neutron-induced damage. Finally, a model to calculate the dark current of irradiated devices doped with deep-impurities is presented.
