Optimization of PIN Photodiodes Parameters for Enhanced Proton Radiation Tolerance Based on Numerical Simulations

MARCELO ANGEL CAPPELLETTI; ARIEL PABLO CÉDOLA; EITEL LEOPOLDO PELTZER Y BLANCÁ

Maryland

Simposio; ISDRS 2007 (International Semiconductor Device Research Symposium); 2007

Universidad de Maryland, Estados Unidos

Present work is focused on study of radiation induced displacement damage effects on silicon PIN photodiodes at both, dark and illumination conditions, by mean of numerical simulations. In particular, 10 MeV protons at a maximum fluence of 2.5  1014 p+/cm2 were considered. Structures with total lengths (LT) of 50 μm were simulated, with different intrinsic layer lengths (LI from 50% to 90% of LT), identical applied bias (-10V) and doping profiles.