Study of the Light Intensity Threshold for Simulated PIN Photodiode under Proton Radiation

MARCELO ANGEL CAPPELLETTI; EITEL LEOPOLDO PELTZER Y BLANCÁ

Viena

Workshop; IWCE-11 (International Workshop on Computational Electronics); 2006

Universidad Tecnológica de Viena, Austria

The knowledge of the space radiation environment is essential for predicting if a device will survive to the total radiation which will expect to encounter in a space mission. The trapped proton fluxes are often the most important radiation consideration for devices especially designed to operate in spatial applications in low earth orbit (LEO), near 600 km altitude. This illustrate why proton testing is important. The PIN (p-intrinsic-n) photodiodes are every time more used in spatial applications. The PIN photodiodes are semiconductor devices that answer to high energy particles and photons generating a flow of current proportional to the incident power. The effects of the radiation studied were the atomic displacement damages.