Radiation-Damaged Simulation PIN Photodiodes

MARCELO ANGEL CAPPELLETTI; ULISES URCOLA; EITEL LEOPOLDO PELTZER Y BLANCÁ

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Institute of Physics

Lugar: Londres; Año: 2006 vol. 21 p. 346 - 351

0268-1242

The physical processes taking place in PIN photodiodes exposed to spatial radiation have been investigated in the infrared band. The modelling and simulation of the diodes were done by means of numerical algorithms using the coupled Poisson and Continuity equation to obtain the behaviour of electronic devices. The effects of the radiation studied were the atomic displacement damages. The present work aims at a comparison of the behaviour of differently constructed PIN photodiodes after exposure to 10 MeV protons and 1 MeV neutrons having fluences in both cases in the range of 1 x 1013 to 2.5 x 1014 particle/cm2. We have also included in our simulation the effects produced by the light illumination on the photodiodes, in this case the intensities used were ranged from 0 to 2 mW/cm2. We have obtained as a result of our research one expression that relates the total reverse current and the incident radiation.