Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells

MARCELO ANGEL CAPPELLETTI; GUILLERMO CASAS; ARIEL PABLO CÉDOLA; EITEL LEOPOLDO PELTZER Y BLANCÁ

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IOP PUBLISHING LTD

Lugar: Londres; Año: 2013 vol. 28 p. 1 - 7

0268-1242

The performance of c-Si n+/p/p+ and n+/n/p+ solar cells under AM0 spectrum, irradiated with 1 MeV electrons at fluences below 1017 cm-2 has been analyzed by means of computer simulation. The software used, fully developed by the authors, solves numerically in one dimension under steady-state conditions, the Poisson and continuity equations self consistently. The influence of constructive characteristics and different levels of hazardous environmental work conditions on the maximum power point of over 150 devices has been investigated. The study has allowed the authors to propose a useful analytical model related to the constructive characteristics of the device such as polarity, base resistivity and total thickness, with the aim of examining the electrical performance of Si space solar cells. Results presented in this work are important in order to contribute to the design of radiation-hardened devices.