Study of Semiconductor Devices Exposed to Spatial Radiation

GUSTAVO DOMINGO YAGÜEZ; DIEGO VILLARRAZA; MARCELO ANGEL CAPPELLETTI; EITEL LEOPOLDO PELTZER Y BLANCÁ

WSEAS Transactions on Systems

World Scientific and Engineering Academy and Society (WSEAS) Press

Año: 2004 vol. 3 p. 1228 - 1233

1109-2777

The present work aims at the study of physical processes that take place in electronic devices exposed to spatial radiation. The modelling and simulation of electronic devices is done by means of numerical algorithms.  By using the coupled Poisson and Continuity equation we have obtained the description of the behavior of electronic devices numerically. The effects of the radiation studied in the present work are the atomic displacement damages and the ionization caused by an incident charged particle.