AgGeSe-Based Bulk Glasses: A Survey of their Fundamental Properties

MARIA ANDREA UREÑA; FONTANA, M.; PIARRISTEGUY, A.; ARCONDO, B.

JOURNAL OF ALLOYS AND COMPOUNDS

ELSEVIER SCIENCE SA

Lugar: Amsterdan; Año: 2010 vol. 495 p. 305 - 308

0925-8388

GexSe1-x system is a well known glass former for x <0.43. The addition of third elements (i.e. Ag, Sb, Sn?) even up to high concentrations is possible without affecting its glass forming ability. These metals confer these glasses very particular properties. Ag-Ge-Se glasses are semiconductors for low Ag concentration whereas they are fast ionic conductors above 8 at.% Ag. The structure, thermal behavior and transport properties of these glasses are analyzed. Metal doping is easily performed in chalcogenide glasses. It has been observed that, in contrast to crystalline semiconductors, their transport properties were not substantially affected as the valence bonds of the doping elements are completely saturated. The resource of doping with a 57Fe probe is widely employed in the materials study in order to characterize the short range order of their structure by means of Mössbauer Effect spectroscopy. These results are discussed and correlated to the structure and morphology of this Chalcogenide system.