Influence of Tungsten Doping on the Ferroelectric Behavior of Sr0.8Bi2.3Ta2O9 Thin Films

M.L. SANTIAGO; R. MACHADO; M.G.STACHIOTTI; O DE SANCTIS

FERROELECTRICS

TAYLOR & FRANCIS LTD

Lugar: Philadelfia; Año: 2010

0015-0193

The substitution effect of W+6 at Ta+5 site on the structural, dielectric and ferroelectric properties of Bi-rich Sr0.8Bi2.3Ta2O9 (SBT) thin films is reported. Samples of compositions Sr0.8-x/2Bi2.3Ta2-xWxO9 (SBTW) with x ranging from 0.0 to 0.2 were synthesized by a chemical solution deposition technique using non-hydrolyzing precursors. The microstructure andferroelectricity of SBTW films as functions of dopant concentration and annealing temperature were studied. Well-defined hysteresis loops were obtained for the doped films annealed between 650 Co and 750Co. The ferroelectric properties, however, were not improved compared to those of undoped SBT films due to the appearance of a non-ferroelectric secondary phase.