Impact of atomic defects in the electronic states of FeSe 1 − x S x superconducting crystals

ARAGÓN SÁNCHEZ, JAZMÍN; AMIGÓ, MARÍA LOURDES; BELUSSI, CRISTIAN HORACIO; ALE CRIVILLERO, MARÍA VICTORIA; SUÁREZ, SERGIO; GUIMPEL, JULIO; NIEVA, GLADYS; ESTEBAN GAYONE, JULIO; FASANO, YANINA

JPhys Materials

Institute of Physics

Año: 2022 vol. 5

The electronic properties of Fe-based superconductors are drastically affected by deformations on their crystal structure introduced by doping and pressure. Here we study single crystals of FeSe 1 − x Sx and reveal that local crystal deformations such as atomic-scale defects impact the spectral shape of the electronic core level states of the material. By means of scanning tunneling microscopy we image S-doping induced defects as well as diluted dumbbell defects associated with Fe vacancies. We have access to the electronic structure of the samples by means of x-ray photoemission spectroscopy (XPS) and show that the spectral shape of the Se core levels can only be adequately described by considering a principal plus a minor component of the electronic states. We find this result for both pure and S-doped samples, irrespective that in the latter case the material presents extra crystal defects associated to doping with S atoms. We argue that the second component in our XPS spectra is associated with the ubiquitous dumbbell defects in FeSe that are known to entail a significant modification of the electronic clouds of surrounding atoms.