A memristive diode with giant memcapacitance

RUBI, DIEGO; ROMAN ACEVEDI, WILSON STIBENS; ACHA, CARLOS

San Martín - Prov. Bs. As.

Workshop; MULTIFUNCTIONAL OXIDES: SYNERGY BETWEEN FUNDAMENTAL SCIENCE AND NOVEL TECHNOLOGIES; 2018

CNEA

Resistive switching (RS) is defined as the reversible and non-volatile change of the electrical resistance of metal-insulator-metal structures upon the application of electrical stress [1]. This effect may lead to the development of a new generation of micro and nano-electronics devices, such as non-volatile (RRAM) memories and disruptive devices presenting neuromorphic behavior.RS has been ubiquitously found in transition metal oxides, including complex oxides usually known as manganites. Several RS mechanisms have been proposed, and usually different mechanisms can coexist in single systems [2]. Here we address the RS behavior found on epitaxial thin films of the manganite La0.5Sr0.5Mn0.5Co0.5O3-δ (LSMCO) grown on Nb:SrTiO3 substrates. This manganite has the particularity of presenting two stable phases with a significant difference in their oxygen stochiometry [3] and resistivity. We show thatit is possible to switch between both phases by the application of external electrical stress.Based on thorough electrical characterization, we show that RS takes place at the manganite/substrate interface, where a switchable p-n diode is formed. In addition, we found that the RS process is concomitant with a giant memcapacitance effect, which opens interesting possibilities for RF applications.[1] A. Sawa, Mater. Today 11, 28 (2008).[2] D. Rubi, F. Tesler, I. Alposta, A. Kalstein, N. Ghenzi, F. Gomez-Marlasca, M. Rozenberg, and P. Levy,App. Phys. Lett. 103, 163506 (2013); W. Román Acevedo, C. Acha, M. J. Sánchez, P. Levy, and D. Rubi,Appl. Phys. Lett. 110, 053501 (2017)[3] A. Aguadero et al., Angew. Chem. Int. Ed. 2011, 50, 6557 ?6561