Memory Mechanisms in Oxides

PABLO LEVY

Bueno Aires, Argentina

Workshop; At the Frontiers of Condensed Matter 2008; 2008

Abstract. We investigate the electric pulse induced resistance switching in a transition metaloxide-metal contact at room temperature - a non volatile, reversible and multilevel memorydevice. Using a simple multiterminal configuration, we find that the complementary effect -inwhich the contact resistance of each pulsed electrode displays variations of opposite sign- isstrongly influenced by the history of the pulsing procedure. Loops performed by varying themagnitude and sign of the stimulus at each pulsed electrode allow to disentangle their solecontribution at different stages of the process. Electromigration of oxygen ions and vacanciesis discussed as participating at the core of the underlying mechanisms for resistance switching.