Weak localization effects in some metallic perovskites

G. HERRANZ, F. S´ANCHEZ, B. MART´ıNEZ, J. FONTCUBERTA1, M.V. GARC´ıA-CUENCA, C. FERRATER, M. VARELA, AND P. LEVY

EUROPEAN BIOPHYSICS JOURNAL WITH BIOPHYSICS LETTERS

SPRINGER

Lugar: Paris; Año: 2004 vol. 40 p. 439 - 444

0175-7571

Received 16 December 2003Published online 13 July 2004 –
c EDP Sciences, Societ`a Italiana di Fisica, Springer-Verlag 2004Abstract. We report a systematic study of the low-temperature electrical resistivity of epitaxial nanometricSrRuO3 and LaNiO3 thin films. Weak localization effects were taken into account in order to explain the presence of minima in the ρ–T curves. This description can be rationalized by the fact that, at the given growth conditions, the mean free path was comparable to the Fermi wavelength of the carriers, so that effects arising from quantum interference of the electronic wavefunctions were expected. The results reported here are of special interest to understand the relevance of weak localization effects in oxides. PACS. 72.15.Rn Localization effects (Anderson or weak localization) – 72.80.Ga Transition-metalcompounds – 73.50.Bk General theory, scattering mechanisms