Manganite-based three level memristive devices with self-healing capability

W.R.ACEVECO, D.RUBI, F.TESLER, N.GHENZI, F.GOMEZ-MARLASCA, MJR AND PABLO LEVY; LEVY, PABLO

PHYSICS LETTERS A

ELSEVIER SCIENCE BV

Lugar: Amsterdam; Año: 2016 vol. 380 p. 2870 - 2875

0375-9601

Physics Letters A 380 (2016) 2870?2875We report on non-volatile memory devices based on multifunctional manganites. The electric fieldinduced resistive switching of Ti/La1/3Ca2/3MnO3/n-Si devices is explored using different measurementprotocols. We show that using current as the electrical stimulus (instead of standard voltage-controlledprotocols) improves the electrical performance of our devices and unveils an intermediate resistancestate. We observe three discrete resistance levels (low, intermediate and high), which can be set eitherby the application of current?voltage ramps or by means of single pulses. These states exhibit retentionand endurance capabilities exceeding 104 s and 70 cycles, respectively. We rationalize our experimentalobservations by proposing a mixed scenario were a metallic filament and a SiOx layer coexist, accountingfor the observed resistive switching. Overall electrode area dependence and temperature dependentresistance measurements support our scenario. After device failure takes place, the system can beturned functional again by heating up to low temperature (120 ◦C), a feature that could be exploitedfor the design of memristive devices with self-healing functionality. These results give insight intothe existence of multiple resistive switching mechanisms in manganite-based memristive systems andprovide strategies for controlling them.