Oxygen ion implantation in Strontium Bismuth Tantalate thin films

L.RICO; GOMEZ, BERNARDO JOSE A; M. STACHIOTTI; N. PELLEGRI; J. N. FEUGEAS; O. DE SANCTIS

Angra dos Reis, Brazil

Congreso; XII Latin American Congress of Surface Science and its Applications; 2005

Claf

Strontium Bismuth Tantalate (SBT) ferroelectric thin films have attracted considerable attention for the development of non-volatile ferroelectric random access memories (NV-FRAMs). These films, however, have a critical problem: a high processing temperature (>700ºC ) is required for the crystallization of the perovskite phase. The thermal evolution of the SBT films prepared by Chemical Solution Deposition (CSD) techniques showed the formation of an intermediate oxygendeficient fluorite phase at ~550ºC. The SBT perovskite phase crystallizes at higher temperatures. To favor an earlier perovskite crystallization, SBT thin films were implanted with oxygen ions pulses produced by a Plasma Focus (1 kJ). The samples were annealed at different temperatures in oxygen atmosphere and characterized by GI-XRD and Atomic Force Microscopy techniques. It was found that oxygen addition into the SBT structure promotes a better crystallization of the perovskite phase.