Impurity cationic-site population and electric field gradient dependence on ionic size in bixbyite sesquioxides implanted with 181Hf  181Ta

M. RENTERIA; A. G. BIBILONI; F. G. REQUEJO; A. F. PASQUEVICH; J. SHITU; F. G REQUEJO; L. A. ERRICO; K. FREITAG

MODERN PHYSICS LETTERS B

WORLD SCIENTIFIC PUBL CO PTE LTD

Lugar: London, UK; Año: 1998 vol. 12 p. 819 - 827

0217-9849

The Perturbed-Angular-Correlation technique was used to study the impurity cationic site population and electric field gradient behavior of scandium and indium sesquioxides implanted with 181Hf  181Ta. We found a departure of the tantalum (hafnium) relative occupancy of the crystallographic sites C and D in the case of scandium sesquioxide from the natural abundance of the sites, that could be explained in terms of the small lattice parameter of this sesquioxide. A similar behavior occurs in the case of indium sesquioxide. Additionally we confirm a sort of phase transition of the Q (Ta) for sites C and D that takes place for "a"  1.012 nm, that is for lattice parameters smaller than that of ytterbium sesquioxide.