INVESTIGADORES
PONCE Miguel Adolfo
artículos
Título:
Influence of degradation on the electrical conduction process in ZnO and SnO2-based varistors
Autor/es:
M. A. PONCE, M. A. RAMÍREZ, R. PARRA, C. MALAGÚ, M. S. CASTRO, P. R. BUENO, J. A. VARELA
Revista:
JOURNAL OF APPLIED PHYSICS
Editorial:
AMER INST PHYSICS
Referencias:
Año: 2010 vol. 108 p. 1 - 6
ISSN:
0021-8979
Resumen:
The conduction process during degradation, promoted by the application of fixed dc bias voltage at
different temperatures thermal steady states and current pulses 8/20 s on ZnO and SnO2-based
varistors, was studied comparatively in the present work. The electrical properties of the varistor
systems were highly damaged after degradation with current pulse 8/20 s. Variations on the
potential barrier height and donor concentration were calculated by fitting the experimental data
from impedance spectroscopy measurements assuming the formation of Schottky barriers at the
grain boundaries and electrical conduction to occur due to tunneling and thermionic emission.
© 2010 American Institute of Physics. doi:10.1063/1.3490208
potential barrier height and donor concentration were calculated by fitting the experimental data
from impedance spectroscopy measurements assuming the formation of Schottky barriers at the
grain boundaries and electrical conduction to occur due to tunneling and thermionic emission.
© 2010 American Institute of Physics. doi:10.1063/1.3490208
potential barrier height and donor concentration were calculated by fitting the experimental data
from impedance spectroscopy measurements assuming the formation of Schottky barriers at the
grain boundaries and electrical conduction to occur due to tunneling and thermionic emission.
© 2010 American Institute of Physics. doi:10.1063/1.3490208
varistors, was studied comparatively in the present work. The electrical properties of the varistor
systems were highly damaged after degradation with current pulse 8/20 s. Variations on the
potential barrier height and donor concentration were calculated by fitting the experimental data
from impedance spectroscopy measurements assuming the formation of Schottky barriers at the
grain boundaries and electrical conduction to occur due to tunneling and thermionic emission.
© 2010 American Institute of Physics. doi:10.1063/1.3490208
potential barrier height and donor concentration were calculated by fitting the experimental data
from impedance spectroscopy measurements assuming the formation of Schottky barriers at the
grain boundaries and electrical conduction to occur due to tunneling and thermionic emission.
© 2010 American Institute of Physics. doi:10.1063/1.3490208
potential barrier height and donor concentration were calculated by fitting the experimental data
from impedance spectroscopy measurements assuming the formation of Schottky barriers at the
grain boundaries and electrical conduction to occur due to tunneling and thermionic emission.
© 2010 American Institute of Physics. doi:10.1063/1.3490208
varistors, was studied comparatively in the present work. The electrical properties of the varistor
systems were highly damaged after degradation with current pulse 8/20 s. Variations on the
potential barrier height and donor concentration were calculated by fitting the experimental data
from impedance spectroscopy measurements assuming the formation of Schottky barriers at the
grain boundaries and electrical conduction to occur due to tunneling and thermionic emission.
© 2010 American Institute of Physics. doi:10.1063/1.3490208
potential barrier height and donor concentration were calculated by fitting the experimental data
from impedance spectroscopy measurements assuming the formation of Schottky barriers at the
grain boundaries and electrical conduction to occur due to tunneling and thermionic emission.
© 2010 American Institute of Physics. doi:10.1063/1.3490208
potential barrier height and donor concentration were calculated by fitting the experimental data
from impedance spectroscopy measurements assuming the formation of Schottky barriers at the
grain boundaries and electrical conduction to occur due to tunneling and thermionic emission.
© 2010 American Institute of Physics. doi:10.1063/1.3490208
and current pulses 8/20 s on ZnO and SnO2-based
varistors, was studied comparatively in the present work. The electrical properties of the varistor
systems were highly damaged after degradation with current pulse 8/20 s. Variations on the
potential barrier height and donor concentration were calculated by fitting the experimental data
from impedance spectroscopy measurements assuming the formation of Schottky barriers at the
grain boundaries and electrical conduction to occur due to tunneling and thermionic emission.
© 2010 American Institute of Physics. doi:10.1063/1.3490208
potential barrier height and donor concentration were calculated by fitting the experimental data
from impedance spectroscopy measurements assuming the formation of Schottky barriers at the
grain boundaries and electrical conduction to occur due to tunneling and thermionic emission.
© 2010 American Institute of Physics. doi:10.1063/1.3490208
potential barrier height and donor concentration were calculated by fitting the experimental data
from impedance spectroscopy measurements assuming the formation of Schottky barriers at the
grain boundaries and electrical conduction to occur due to tunneling and thermionic emission.
© 2010 American Institute of Physics. doi:10.1063/1.3490208
/20 s. Variations on the
potential barrier height and donor concentration were calculated by fitting the experimental data
from impedance spectroscopy measurements assuming the formation of Schottky barriers at the
grain boundaries and electrical conduction to occur due to tunneling and thermionic emission.
© 2010 American Institute of Physics. doi:10.1063/1.34902082010 American Institute of Physics. doi:10.1063/1.3490208