INVESTIGADORES
PONCE Miguel Adolfo
artículos
Título:
Inadequacy of the MottSchottky equation in strongly pinned double Schottky barriers with no
Autor/es:
F. SCHIPANI ; C. ALDAO; M. PONCE
Revista:
JOURNAL OF PHYSICS - D (APPLIED PHYSICS)
Editorial:
IOP PUBLISHING LTD
Referencias:
Lugar: Londres; Año: 2012 p. 1 - 5
ISSN:
0022-3727
Resumen:
Abstract
The capacitive behaviour of an intergranular double Schottky barrier in a polycrystalline
semiconductor was evaluated. We found that the widely applied version of the MottSchottky
equation can lead to significant errors. Even though we considered strong Fermi level pinning
at the interface and no deep levels, the MottSchottky equation can be inadequate leading to
huge errors due to voltage splitting at double Schottky barriers. Experiments carried out on
ZnO varistors corroborated the main trends of our analysis.