IIIE 20352
INSTITUTO DE INVESTIGACIONES EN INGENIERIA ELECTRICA "ALFREDO DESAGES"
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
High-Gain Differential-Output CMOS LNA for the 700 MHz LTE Band
Autor/es:
G. O. BARRAZA WOLF; J. E. COUSSEAU; F. H. GREGORIO,
Lugar:
Mar del Plata
Reunión:
Congreso; XVII Reunión de trabajo en Procesamiento de la Información y Control; 2017
Institución organizadora:
Universidad Nacional de Mar del Plata
Resumen:
We present the design of a low-noise amplifier (LNA) with high-gain and differential output suitable for Long Term Evolution (LTE) receivers front-ends operating in 700 MHz band.The circuit, built in 130 nm CMOS technology, occupies an area of 453 μm x 259 μm (without pads). The LNA is powered with 3.3 V and consumes a current of 6 mA (core). It reaches a power gain of 24.98 dB with a maximum noise figure of 1.5 dB.
