Dynamical diffusion and renormalization group equation for the Fermi velocity in doped graphene

BECHTHOLD, P., ARDENGHI, J.S., JUAN, A., GONZÁLEZ, E.A., JASEN, P.V.

PHYSICA B - CONDENSED MATTER

ELSEVIER SCIENCE BV

Lugar: Amsterdam; Año: 2014 vol. 452 p. 92 - 101

0921-4526

We investigate the ballistic electron transport in a monolayer graphene with configurational averaged impurities, located between two clean graphene leads. It is shown that the electron transmission are strongly dependent on the concentration of impu- rities and the incident energy. In turn, the conductance computed using the Landauer formalism shows a similar behavior to those found in experimental works as a function of the applied voltage for different concentrations of impurities in the limit of low tem- peratures. In the limit of zero bias voltage, the conductance shows a minimum value which reduces to zero for high concentration of impurities which disentangle graphene sublattices. These results can be very helpful for exploring the tunneling mechanism of elec- trons through doped thermodynamically stable graphene