Wetting layer growth in the continuous film regime

G.J. SIBONA; C.E. BUDDE; C.A. CONDAT

Kansas City, MO (EE.UU.)

Conferencia; "March Meeting", American Physical Society; 1997

American Physical Society

The growth of a wetting layer at the surface of a critical binary mixture is analyzed assuming that it is controlled by the trapping of particles of the heavier phase diffusing in the upper bulk phase. It is further assumed that the steady-state concentration of these particles, which is determined by the gravity field, is reached at times much shorter than those characterizing the layer formation. The lower face of the wetting layer is modelled as an imperfect trap whose trapping rate depends on the layer properties.