INSTITUTO DE FISICA LA PLATA
Unidad Ejecutora - UE
congresos y reuniones científicas
Solid-State Reaction Doping Process of Hf Impurities in the Semiconductor C-Tm2O3 Monitored by TDPAC Spectroscopy
G. N. DARRIBA; L. A. ERRICO; E. L. MUÑOZ; M. RENTERÍA
Buenos Aires, Argentina.
Congreso; XV International Symposium on Metastable, Amorphous and Nanostructured Materials; 2008
We show how g-g Time-Differential Perturbed-Angular-Correlation (TDPAC) experiments are an excellent test of the doping process of metallic impurities in oxide semiconductors performed by ball-milling-assisted solid-state reactions. The ionic exchange of donor Hf impurities in substitutional cationic sites of the cubic (bixbyite) phase of the wide-gap semiconductor Thulium oxide was studied during a ball-milling-assisted solid-state reaction between C-Tm2O3 and neutron-activated m-HfO2. 181Ta atoms, obtained after the b --decay of the 181Hf-isotope, were used as probes in TDPAC experiments carried out after each step of the doping process. The measured hyperfine interactions at 181Ta sites enabled the electric-field gradient tensor (EFG) characterization at representative Hf sites in each step of the doping process. The efficiency and substitutional character of the exchange process are discussed and elucidated in the frame of an empirical EFG systematic established in isostructural rare-earth oxides sharing the bixbyite structure.